Controlling the electronic and physical coupling on dielectric thin films

• Philipp Hurdax,
• Michael Hollerer,
• Larissa Egger,
• Georg Koller,
• Xiaosheng Yang,
• Anja Haags,
• Serguei Soubatch,
• Frank Stefan Tautz,
• Mathias Richter,
• Alexander Gottwald,
• Peter Puschnig,
• Martin Sterrer and
• Michael G. Ramsey

Beilstein J. Nanotechnol. 2020, 11, 1492–1503, doi:10.3762/bjnano.11.132

• : decoupling; integer charge transfer; organic films; para-sexiphenyl; thin dielectric film; Introduction Since the first scanning tunneling microscope (STM) imaging of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of pentacene (5A) on NaCl/Cu(111) was

• and below the Fermi level, with a large gap between a singly occupied molecular orbital (SOMO) and a singly unoccupied molecular orbital (SUMO). In addition, PT confirms an integer charge transfer, which would be expected to result from tunneling [15]. However, using the ability to tune the MgO(100

• introduction of the dielectric interlayer can lead to integer charge transfer and electrostatic coupling to this otherwise passive metal surface. Unlike the 5A case, Φcrit for the charge transfer is not equal to the Φpin for 6P. This is understood in terms of conformational changes in the 6P and the enhanced